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1

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

Tsuchida, Hidekazu, Kamata, Isaho, Ito, Masahiko, Miyazawa, Tetsuya, Uehigashi, Hideyuki, Fukada, Keisuke, Fujibayashi, Hiroaki, Naitou, Masami, Hara, Kazukuni, Osawa, Hitoshi, Sugiura, Toshikazu, Koz

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.45 MB

english, 2016

2

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

Fujibayashi, Hiroaki, Ito, Masahiko, Ito, Hideki, Kamata, Isaho, Naito, Masami, Hara, Kazukuni, Yamauchi, Shoichi, Suzuki, Kunihiko, Yajima, Masayoshi, Mitani, Shinichi, Suzuki, Katsumi, Aoki, Hirofum

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 357 KB

english, 2014

3

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

Hara, Kazukuni, Takaki, Shigeyuki, Tanishita, Shinichi, Uematsu, Daisuke, Hoshino, Yuto, Otake, Nobuyuki, Ohara, Junji, Onda, Shoichi

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 992 KB

english, 2019

4

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

Ito, Masahiko, Fujibayashi, Hiroaki, Ito, Hideki, Kamata, Isaho, Naito, Masami, Hara, Kazukuni, Yamauchi, Shoichi, Suzuki, Kunihiko, Yajima, Masayoshi, Mitani, Shinichi, Suzuki, Katsumi, Aoki, Hirofum

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 359 KB

english, 2014

5

Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

Fujibayashi, Hiroaki, Ito, Masahiko, Ito, Hideki, Kamata, Isaho, Naito, Masami, Hara, Kazukuni, Yamauchi, Shoichi, Suzuki, Kunihiko, Yajima, Masayoshi, Mitani, Shinichi, Suzuki, Katsumi, Aoki, Hirofum

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 576 KB

english, 2014

6

Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide Structure

Tokura, Norihito, Hara, Kazukuni, Miyajima, Takeshi, Fuma, Hiroo, Hara, Kunihiko

Journal:

Japanese Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 2.19 MB

english, 1995

7

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

Uehigashi, Hideyuki, Fukada, Keisuke, Ito, Masahiko, Kamata, Isaho, Fujibayashi, Hiroaki, Naitou, Masami, Hara, Kazukuni, Osawa, Hitoshi, Kozawa, Takahiro, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 769 KB

english, 2016

8

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Kokubo, Nobuhiko, Tsunooka, Yosuke, Fujie, Fumihiro, Ohara, Junji, Hara, Kazukuni, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 1.12 MB

english, 2018

9

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer

Hara, Kazukuni, Naito, Masami, Fujibayashi, Hiroaki, Akiba, Atsuya, Takeuchi, Yuuichi, Milikofu, Olga, Kozu, Tomomi

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 755 KB

english, 2015

10

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Tokuda, Yuichiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu, Onda, Shoichi

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 506 KB

english, 2014

11

Mechanism of nitrogen incorporation in sublimation growth of SiC

Masami Naitoh, Kazukuni Hara, Fusao Hirose, Shoichi Onda

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 107 KB

english, 2002

12

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

Hara, Kazukuni, Fujibayashi, Hiroaki, Takeuchi, Yuuichi, Omae, Shoichiro

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 1.86 MB

english, 2017

13

Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices

Malhan, Rajesh Kumar, Nakamura, Hiroki, Onda, Shoichi, Nakamura, Daisuke, Hara, Kazukuni

Journal:

Materials Science Forum

Year:

2003

File:

PDF, 475 KB

2003

14

Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.64 MB

english, 2016

15

Vital Issues for SiC Power Devices

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 510 KB

1998

16

Self-Healing Phenomenon of Micropipes in Silicon Carbide

Okamoto, Atsuto, Seno, Yoshiki, Sugiyama, Naohiro, Hirose, Fusao, Hara, Kazukuni, Tani, Toshihiko, Nakamura, Daisuke, Kamiya, Nobuo, Onda, Shoichi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 497 KB

2002

17

Self-Assembled Monolayers of Alkoxy-Substituted Octadehydrodibenzo[12]annulenes on a Graphite Surface: Attempts at peri-Benzopolyacene Formation by On-Surface Polymerization

Kazukuni Tahara, Koji Inukai, Noritaka Hara, Charles A. Johnson II, Michael M. Haley, Yoshito Tobe

Journal:

Chemistry - A European Journal

Year:

2010

Language:

english

File:

PDF, 1.05 MB

english, 2010

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